}
EXPORT_SYMBOL_GPL(nanddev_mtd_erase);
+/**
+ * nanddev_mtd_max_bad_blocks() - Get the maximum number of bad eraseblock on
+ * a specific region of the NAND device
+ * @mtd: MTD device
+ * @offs: offset of the NAND region
+ * @len: length of the NAND region
+ *
+ * Default implementation for mtd->_max_bad_blocks(). Only works if
+ * nand->memorg.max_bad_eraseblocks_per_lun is > 0.
+ *
+ * Return: a positive number encoding the maximum number of eraseblocks on a
+ * portion of memory, a negative error code otherwise.
+ */
+int nanddev_mtd_max_bad_blocks(struct mtd_info *mtd, loff_t offs, size_t len)
+{
+ struct nand_device *nand = mtd_to_nanddev(mtd);
+ struct nand_pos pos, end;
+ unsigned int max_bb = 0;
+
+ if (!nand->memorg.max_bad_eraseblocks_per_lun)
+ return -ENOTSUPP;
+
+ nanddev_offs_to_pos(nand, offs, &pos);
+ nanddev_offs_to_pos(nand, offs + len, &end);
+
+ for (nanddev_offs_to_pos(nand, offs, &pos);
+ nanddev_pos_cmp(&pos, &end) < 0;
+ nanddev_pos_next_lun(nand, &pos))
+ max_bb += nand->memorg.max_bad_eraseblocks_per_lun;
+
+ return max_bb;
+}
+EXPORT_SYMBOL_GPL(nanddev_mtd_max_bad_blocks);
+
/**
* nanddev_init() - Initialize a NAND device
* @nand: NAND device